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CYStech Electronics Corp.
High Cutoff Frequency NPN Epitaxial Planar Transistor
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 1/8
BTC5094N3
Description
The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band.
Equivalent Circuit
BTC5094N3
SOT-23
BBase CCollector EEmitter
Features
* Low Noise and High Gain: * NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz S21 =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz
Applications
* Low noise and high gain amplifiers & Oscillator buffer amplifiers * Cordless Phone : LNA , MIX ,and OSC * Remote Cotroller
Absolute Maximun Ratings
* Maximum Ratings (Ta=25C) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 10 18 2.5 20 150 125 -50~125 Unit V V V mA mW C C
*1
Note: *1 Here we define the point DC current gain drops off.
BTC5094N3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
* Characterization Information (Ta=25C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Minimum Noise Figure Associated Gain Insertion Gain |S21|2 In 50 Ohm system Output Capacitance Conditions Symbol Min VCB =3V, IE=0 ICBO VEB =1V IEBO VCE =2V, IC =1mA hFE(1) 52 VCE =6V, IC =7mA hFE(2) 52 VCE =1V, IC =10mA fT VCE =3V, IC =12mA VCE =2V, IC =4.2mA, f =0.9GHz NFmin VCE =5V, IC =4.5mA, f =0.9GHz VCE =2V, IC =4.2mA, f =0.9GHz GA VCE =5V, IC =4.5mA, f =0.9GHz VCE =2V, IC =4.2mA, f =0.9GHz |S21|2 VCE =5V, IC =4.5mA, f =0.9GHz VCB =10V, IE=0, f = 0.9GHz Cob -
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 2/8
Typ. Max Unit 1 uA 1 uA 270 7.6 GHz 9 GHz 1.4 dB 1.6 dB 12 dB 13.5 dB 12.8 dB 13.5 dB 0.7 1.0 pF
Classification Of hFE(1)
Rank Range K 52~120 P 82~180 Q 120~270
S-Parameters
FREQ. (GHz) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
BTC5094N3
* VC=2V, IC=4.2mA, IB=60uA S11 Mag 0.604 0.524 0.454 0.399 0.355 0.320 0.291 0.268 0.249 0.237 0.225 0.221 0.218 0.216 0.220 0.223 0.229 Ang -54.55 -68.94 -81.62 -92.38 -102.51 -111.90 -121.04 -129.71 -138.30 -147.20 -155.29 -163.42 -171.96 -179.45 173.74 166.14 160.61 Mag 7.842 7.093 6.422 5.768 5.226 4.756 4.367 4.011 3.717 3.490 3.229 3.049 2.880 2.708 2.568 2.465 2.311 S21 Ang 133.59 123.62 114.96 107.71 101.24 95.56 90.53 85.55 81.44 77.18 73.05 69.95 65.80 62.11 59.78 55.42 52.89 Mag 0.067 0.077 0.084 0.090 0.096 0.101 0.107 0.113 0.118 0.125 0.131 0.137 0.144 0.151 0.158 0.167 0.173 S12 Ang 51.54 48.20 46.25 45.71 45.45 45.48 46.55 46.59 47.32 48.06 48.45 48.55 49.30 49.54 49.59 49.92 49.56 Mag 0.669 0.583 0.518 0.468 0.431 0.400 0.380 0.364 0.348 0.339 0.330 0.324 0.318 0.314 0.309 0.310 0.305 S22 Ang -35.46 -39.37 -41.88 -43.32 -44.21 -44.69 -44.62 -45.20 -45.38 -45.42 -46.12 -46.58 -47.16 -48.21 -48.87 -49.95 -51.14
CYStek Product Specification
CYStech Electronics Corp.
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 0.239 0.246 0.255 0.266 0.275 0.283 0.296 0.301 0.314 154.93 149.44 146.00 141.03 137.61 134.78 131.62 128.73 126.55 2.230 2.159 2.032 2.008 1.914 1.845 1.807 1.734 1.678 50.57 46.58 44.85 41.73 38.98 36.23 34.63 30.54 29.10 0.181 0.190 0.198 0.207 0.215 0.225 0.235 0.242 0.252 49.96 49.43 49.13 48.98 48.15 47.73 47.19 46.23 45.96
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 3/8
0.305 0.300 0.298 0.298 0.295 0.293 0.293 0.290 0.292
-52.25 -54.01 -54.87 -56.73 -58.27 -60.00 -61.99 -63.35 -66.03
* VC=5V, IC=4.5mA, IB=60uA FREQ. (GHz) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 S11 Mag 0.601 0.520 0.448 0.391 0.343 0.304 0.271 0.244 0.221 0.204 0.188 0.180 0.174 0.168 0.171 0.173 0.177 0.187 0.193 0.202 0.214 0.223 0.230 0.244 0.249 0.262 Ang -50.63 -63.63 -75.05 -84.69 -93.82 -102.33 -110.71 -118.73 -126.87 -135.86 -144.08 -153.03 -162.61 -171.25 -179.18 171.39 164.95 158.33 151.69 148.00 142.43 138.68 135.64 132.44 129.17 127.23 Mag 8.306 7.547 6.868 6.188 5.624 5.124 4.716 4.336 4.014 3.777 3.486 3.297 3.121 2.930 2.777 2.676 2.496 2.413 2.345 2.192 2.181 2.076 1.997 1.961 1.884 1.820 S21 Ang 135.16 125.50 116.98 109.83 103.45 97.83 92.86 87.94 83.94 79.76 75.61 72.75 68.59 64.89 62.84 58.35 55.94 53.90 49.72 48.29 45.23 42.50 39.66 38.47 33.93 32.88 Mag 0.058 0.065 0.072 0.077 0.082 0.087 0.092 0.097 0.102 0.108 0.114 0.120 0.126 0.133 0.140 0.148 0.155 0.162 0.171 0.178 0.189 0.196 0.206 0.217 0.224 0.235 S12 Ang 51.44 48.75 47.60 47.52 47.79 48.29 49.77 50.18 51.28 52.42 53.16 53.50 54.63 55.21 55.36 56.18 55.92 56.69 56.35 56.24 56.43 55.84 55.56 55.08 54.51 54.48 Mag 0.678 0.602 0.546 0.505 0.475 0.451 0.436 0.424 0.412 0.407 0.401 0.398 0.395 0.393 0.390 0.393 0.390 0.393 0.390 0.389 0.392 0.390 0.390 0.392 0.391 0.395 S22 Ang -29.88 -32.11 -33.33 -33.75 -33.95 -33.81 -33.39 -33.71 -33.60 -33.56 -34.10 -34.42 -34.93 -35.76 -36.39 -37.29 -38.39 -39.34 -40.76 -41.57 -43.10 -44.47 -46.00 -47.69 -48.94 -51.05
* Smoothed noise data (VC=2V, IC=4.2mA, IB=60uA) FREQ. (GHz) 0.3 0.6
BTC5094N3
FMIN (dB) 0.80 1.01
GAMMA OPT Mag Ang 0.622 13.9 0.401 29.9
Rn (To 50) 0.45 0.35
Ga (dB) 18.89 15.66
F50-S (dB) 1.67 1.4
F50-M (dB) 2.33 1.74
G50 (dB) 17.89 15.22
CYStek Product Specification
CYStech Electronics Corp.
0.9 1.2 1.5 1.8 2.1 2.4 2.7 2.8 1.21 1.42 1.63 1.84 2.04 2.25 2.46 2.53 0.282 0.239 0.246 0.276 0.303 0.301 0.242 0.206 48.2 68.6 90.8 114.6 139.6 165.5 -167.8 -158.8 0.29 0.27 0.24 0.21 0.16 0.14 0.17 0.19 13.05 10.97 9.34 8.08 7.10 6.33 5.68 5.48 1.42 1.57 1.79 2.04 2.30 2.50 2.62 2.65
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 4/8
2.01 1.82 1.79 2.45 1.87 2.50 2.71 2.91
12.80 10.86 9.19 7.84 6.69 5.64 4.78 4.50
* Smoothed noise data (VC=5V, IC=4.5mA, IB=60uA) FREQ. (GHz) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 2.8 FMIN (dB) 0.87 1.08 1.28 1.49 1.70 1.91 2.12 2.33 2.54 2.61 GAMMA OPT Mag Ang 0.631 12.4 0.411 26.3 0.288 42.5 0.237 61.0 0.233 81.7 0.251 104.9 0.267 130.5 0.256 158.5 0.193 -170.9 0.157 -160.1 Rn (To 50) 0.49 0.38 0.32 0.29 0.27 0.23 0.19 0.16 0.19 0.22 Ga (dB) 19.43 16.36 13.85 11.84 10.24 9.00 8.03 7.27 6.64 6.45 F50-S (dB) 1.80 1.51 1.51 1.65 1.85 2.09 2.32 2.51 2.64 2.68 F50-M (dB) 2.40 1.84 2.38 1.88 1.88 2.50 1.81 2.61 2.63 2.92 G50 (dB) 18.39 15.83 13.47 11.54 9.89 8.55 7.40 6.35 5.50 5.20
HSPICE 2G.6 Model
* NPN BJT Parameters IS=1.444E-16 (A) BF=85.9 NF=1.0 VAF=45.9 (V) IKF=160.3E-3 (A) ISE=2.0E-18 (A) NE=2.0 BR=18.54 NR=1.01 VAR=6.299 IKR=10.0E-3 ISC=1.21E-16 NC=1.01 RB=4.30 (Ohm) IRB=20.0E-3 (A) RBM=2.78 (Ohm) RE=1.011 (Ohm) RC=16.69 (Ohm) CJE=6.04E-13 (F) VJE=1.003 (V) MJE=0.3882 TF=1.22E-11 (Sec) XTF=1.70 VTF=0.69 (V) ITF=0.1 (A) PTF=10.0 (deg) CJC=2.38E-13 (F) VJC=0.7 (V) MJC=0.4474 XCJC=0.3 XTI=3.0 FC=0.9 BV=0.0 (V) IBV=1.0E-3 (A) TR=1.0E-9 (Sec) CJS=2.43E-13 (F) VJS=0.5734 (V) MJS=0.3798 XTB=0.0 EG=1.11 (eV) XTI=3.0 FC=0.9 TNOM=25 (C)
* B'-E' DIODE Parameters IS=1.0E-22 (A) CJO=1.0E-15 (F) RS=10.0 (Ohm) VJ=1.003 (V) N=1.0 M=0.3882 TT=0.0 (Sec) EG=1.11 (eV) * C'-S' DIODE Parameters IS=1.0E-22 (A) CJO=1.0E-15 (F) RS=0.0 (Ohm) VJ=0.5734 (V) N=1.0 M=0.3798
BTC5094N3
KF=0.0 AF=1.0 TNOM=25 (C)
XTI=3.0 FC=0.5 BV=0.0 (V)
KF=0.0 AF=1.0 TNOM=27 (C)
CYStek Product Specification
CYStech Electronics Corp.
TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3(A)
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 5/8
* Other Parasitic Parameters REX=0.0 (Ohm) RSS=10.0 (Ohm) RBX=0.0 (Ohm) RSC=250.0 (Ohm) RCX=0.0 (Ohm) CSP=20.89 (fF) RSX=5.0 (Ohm) CSC=41.79 (fF) RSP=450.0 (Ohm) C1=70 (fF)
C2=150 (fF) C3=80 (fF) Le=0.6 (nH) Lb=0.85 (nH) Lc=0 (nH)
L1=0.5 (nH) L2=0.5 (nH) L3=0.6 (nH)
Transistor Chip Equivalent Circuit
C' B' RBX E REX 0.1nH RSS RSX G-P Rsp CSP C
Package Equivalent Circuit
C3 L1 S' LC C Lb Transistor S Chip B C1 E Le L2 Collector C2
B
RSC
Base CSC
L3 Emitter
BTC5094N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics Curve
Fig.1 Typical Forward Gummel Plot 1.00E+00 1.00E-01
100 90 80 70
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 6/8
Fig.2 Typical Forward Current Gain & Collector Current
Collector and Base Currents (A)
1.00E-02 1.00E-03
VCE=1V
Current Gain
1.2
1.00E-04 1.00E-05 1.00E-06 1.00E-07 1.00E-08 1.00E-09 1.00E-10 0 0.2 0.4 0.6 0.8 1 VCE=1V
60 50 40 30 20 10 0 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Base-Emitter Bias Voltage (V)
Collector Current (A)
Fig.3 Typical Output Characteristics
5.0E-03
Fig.4 Typical fT & Collector Current
1.0E+10 9.0E+09 Vce = 1V Vce = 3 V
Ib=50uA
4.0E-03
8.0E+09
Collector Currennt (A)
Ib=40uA
3.0E-03
Cutoff Frequency (Hz)
7.0E+09 6.0E+09 5.0E+09 4.0E+09 3.0E+09 2.0E+09 1.0E+09
Ib=30uA
2.0E-03
Ib=20uA Ib=10uA
1.0E-03
0.0E+00 0 1 2 3 4 5
0.0E+00 1.0E-04
1.0E-03
1.0E-02
1.0E-01
Collector Voltage (V)
Collector Current (A)
Fig.5 Typical NFmin & Collector Current
5 4.5 4
20 18 16
Fig.6 Typical Associated Gain & Collector Current
Associated Gain (dB)
3.5
14 VCE=2V 12 10 8 6 4 2 0
NFmin (dB)
3 2.5 2 1.5 1 0.5 0 0.1 VCE=2V
Collector Current (mA)
1
10
100
0.1
1
10
100
Collector Current (mA)
BTC5094N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 7/8
Fig.7 Capacitance & Reverse-Biased Voltage
1
Cob
Capacitance (pF)
0.1 0.1 1 10
Reverse Biased Voltage (V)
BTC5094N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C212N3 Issued Date : 2002.05.08 Revised Date :2002.11.01 Page No. : 8/8
A L 3 B 1 2 S
Marking:
TE
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J *: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC5094N3
CYStek Product Specification

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